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| @vic MMBT3904LT1 SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 FEATURES Power dissipation PCM: TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 0.2 W (Tamb=25) 0. 95 1. 0 2. 4 1. 3 Collector current 0.2 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) 2. 9 1. 9 0. 95 Unit: mm unless otherwise specified) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) Test conditions MIN 60 40 6 0.1 0.1 0.1 100 60 0.3 0.95 250 35 35 200 50 V V MHz nS nS nS nS 300 MAX UNIT V V V Ic= 100 A, IE=0 Ic= 1 mA, IB=0 IE= 100A, IC=0 VCB= 60V, IE=0 VCE= 40V, IB=0 VEB= 5V, IC=0 VCE=10V, IC= 1mA VCE= 1V, IC= 50mA IC=50mA, IB= 5mA IC= 50mA, IB= 5mA VCE= 20V, IC= 10mA 0. 4 A A A fT td tr ts tf f=100MHz VCC=3.0Vdc, VBE=-0.5Vdc IC=10mAdc, IB1=1.0mAdc VCC=3.0Vdc, IC=10mAdc IB1=IB2=1.0mAdc DEVICE MARKING MMBT3904LT1=1AM Copyright @vic Electronics Corp. Website http://www.avictek.com |
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